The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jan. 17, 2001
Applicant:
Inventors:
Alfred Porst, München, DE;
Helmut Strack, München, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Heinrich Brunner, Dorfen, DE;
Josef Bauer, Markt Indersdorf, DE;
Reiner Barthelmess, Eltmann, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01L 2/988 ; H01L 2/974 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01L 2/988 ; H01L 2/974 ;
Abstract
A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.