The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2002

Filed:

Jul. 08, 1998
Applicant:
Inventors:

Hideo Takagi, Kawasaki, JP;

Kiyoshi Izumi, Kawasaki, JP;

Wataru Futo, Kawasaki, JP;

Satoshi Otsuka, Kawasaki, JP;

Shigetaka Uji, Kawasaki, JP;

Masataka Hoshino, Kawasaki, JP;

Yukihiro Satoh, Kawasaki, JP;

Koji Endo, Kawasaki, JP;

Yuzuru Ohta, Kawasaki, JP;

Nobuhiro Misawa, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.


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