The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Jul. 06, 2000
Manabu Ikemoto, Sagamihara, JP;
Katsuhisa Yuda, Tokyo, JP;
Other;
Abstract
In a film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma generation chamber to the deposition chamber and caused to react with a process gas to form a silicon oxide film. The deposition apparatus has a host controller for dictating a pattern of control of the process gas flow to an MFC provided in a feed part for feeding the process gas into the deposition chamber. The host controller gives the MFC instructions for executing control to, in a first half side time constituting not more than half of the whole film deposition time, first make zero or limit and then gradually increase the process gas flow. The process gas flow in the first half side time can also be limited so that the thickness of film deposited in the first half side time is not greater than 10% of the overall thickness of the silicon oxide film. A silicon-hydrogen compound (Si H (n=1, 2, 3, . . . )) is used as the process gas.