The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Aug. 29, 2000
Daniel A. Carl, Pleasanton, CA (US);
Barry Chin, Saratoga, CA (US);
Liang Chen, San Jose, CA (US);
Robin Cheung, Cupertino, CA (US);
Peijun Ding, San Jose, CA (US);
Yezdi Dordi, Palo Alto, CA (US);
Imran Hashim, San Jose, CA (US);
Peter Hey, Sunnyvale, CA (US);
Ashok K. Sinha, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.