The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jan. 04, 2001
Panayotis Constantinou Andricacos, Croton-on-Hudson, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
John Michael Cotte, New Fairfield, CT (US);
Lynne Gignac, Beacon, NY (US);
Wilma Jean Horkans, Ossining, NY (US);
Kenneth Parker Rodbell, Sandy Hook, CT (US);
International Business Machines Corp., Armonk, NY (US);
Abstract
A method for forming metal interconnect in a semiconductor structure and the structure formed are disclosed. In the method, a seed layer of a first metal is first deposited into an interconnect opening wherein the seed layer has an average grain size of at least 0.0005 &mgr;m. The semiconductor structure is then annealed at a temperature sufficient to grow the average grain size in the seed layer to at least the film thickness. A filler layer of a second metal is then deposited to fill the interconnect opening overlaying the seed layer such that the filler layer has an average grain size of larger than 0.0005 &mgr;m and comparable to the annealed seed layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile