The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Mar. 07, 2001
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of manufacturing multilevel interconnects. A single or dual damascene interconnect structure is formed in a first dielectric layer. A cap layer or middle etch stop layer is formed over the interconnect structure and the first dielectric layer. The cap layer or the middle etch stop layer is treated with nitrogen plasma to convert a hydrophobic surface into a hydrophilic surface. An adhesion promoter layer is formed over the cap layer or middle etch stop layer. A low-k dielectric layer is formed over the adhesion promoter layer. A single or dual damascene structure is formed in the low-k dielectric layer, thereby forming a multilevel interconnect.