The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jun. 21, 2000
Emi Ishida, Sunnyvale, CA (US);
Srinath Krishnan, Campbell, CA (US);
Ming Hao, Sunnyvale, CA (US);
Effiong Ibok, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Submicron-dimensioned MOS and/or CMOS transistors are fabricated by a process employing removable sidewall spacers made of a material, such as UV-nitride, which has been treated subsequent to its deposition, e.g., by ion implantation, to augment its etch rate with a room temperature etchant, e.g., dilute aqueous HF. The treated spacers are removed with the dilute, aqueous HF after implantation of moderately or heavily-doped source/drain regions but prior to any post-implantation annealing processing, in order not to increase the etch resistance of the spacer material by thermally-induced densification.