The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Jan. 13, 2000
Anthony G. Domenicucci, New Paltz, NY (US);
Lynne M. Gignac, Beacon, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Horatio S. Wildman, Wappingers Falls, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Roy A. Carruthers, Stormville, NY (US);
Christian Lavoie, Ossining, NY (US);
John A. Miller, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A conductive contact having an atomically flat interface. The contact includes, in order, a silicon substrate, a highly disordered silicide layer, and a titanium oxynitride layer. The silicide layer is formed of titanium, silicon, and one of the elements tungsten, tantalum, and molybdenum. The interface between the silicon substrate and the silicide layer is atomically flat. The flat interface prevents diffusion of conductive materials into the underlying silicon substrate. The contact is useful especially for very small devices and shallow junctions, such as are required for ULSI shallow junctions.