The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Jan. 12, 2001
Jun Cai, Singapore, SG;
Keng Foo Lo, Singapore, SG;
Chartered Semiconductor Manufacturing LTD, Singapore, SG;
Abstract
An electrostatic discharge protection structure is provided with a dielectric gate, source and drain contacts, and a semiconductor substrate. The semiconductor substrate is of a first conductivity type having the dielectric gate disposed partially on its surface. The source and drain contacts are connected to source and drain diffusion regions of a second conductivity type separated by the dielectric gate. Deep source and drain wells of the second conductivity type respectively disposed under the source and drain diffusion regions define a channel region of the first conductivity type. The channel region is doped so that the surface breakdown voltage is exceeded before the subsurface depletion region punch-through voltage is exceeded between the deep source and drain wells upon an electrostatic discharge at the drain contact.