The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
May. 05, 2000
Ming-Chou Ho, Hsin-Chu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Chang Song Lin, Hsin-Chu, TW;
Chuan-Li Chang, Hsin-Chu, TW;
Hsin-Ming Chen, Tainan, TW;
Di-Son Kuo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-chu, TW;
Abstract
A modified nitride spacer and making of the same are disclosed. The modified nitride spacer is formed adjacent a high-temperature oxide (HTO) layer which in turn is formed adjacent the sidewalls of a gate electrode. It is shown that the placement of an intervening oxide layer between the sidewalls of the gate electrode and the nitride spacer, in that order only, provides a significant improvement in charge retention in floating gate memory cells. Also, forming of the spacer from pure, undoped oxide only yields the same favorable results.