The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Jul. 18, 2000
Gao Feng, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A new method for forming dual gate dielectrics having high quality where both thin and thick gate dielectric thicknesses can be controlled separately is described. An isolation region separates a first active area from a second active area in a semiconductor substrate. A first gate dielectric layer is formed overlying the semiconductor substrate in the first and second active areas wherein the first gate dielectric layer has a first electrical thickness. The first gate dielectric layer in the second active area is removed. A second gate dielectric layer is formed in the second active area wherein the second gate dielectric layer has a second electrical thickness greater than the first electrical thickness and wherein the second gate dielectric layer is nitrided. A polysilicon layer is deposited overlying the first and second gate dieectric layers. The layers are patterned to form a first gate transistor in the first active area having the first gate dielectric layer thereunder and to form a second gate transistor in the second active area having the second gate dielectric layer thereunder.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile