The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Mar. 20, 2000
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of filling a gap is proposed. The method of the invention is applied on a substrate which has conductive structures formed thereon. A HDPCVD is performed to form a dielectric layer on the substrate. The HDPCVD process comprises multi-steps. In a first step, a gas source is added to a deposition chamber to form dielectric material over the substrate. The gas source comprises reactive gas and inert gas. Thus, the first step can simultaneously perform deposition and sputtering. In a second step, the reactive gas is driven out of the deposition chamber. Only sputtering is used to remove a part of the dielectric material at top corners of the conductive structures. In a third step, the reactive gas is again added into the deposition chamber to deposit the dielectric material until filling the gap.