The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Oct. 03, 2000
Applicant:
Inventors:
Wen-Hou Chiang, Judung Jen, TW;
Cheng-Sung Huang, Feng-Yuan, TW;
Assignee:
ProMos Technologies, Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of forming a non-oxidized WSi layer on a semiconductor wafer, including the following steps. A semiconductor wafer having a silicon substrate is provided within a CVD tool. A WSi layer is formed over the silicon substrate. An SiN layer is formed upon the WSix layer in absence of O ; whereby the WSi layer is non-oxidized.