The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
May. 22, 2000
Jyh-Haur Wang, Hsin-Chu, TW;
Chih-Heng Shen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for preventing gate oxide damage caused by post poly definition implantation is disclosed. It is shown that the antenna ratio that is correlatable to oxide damage can be reduced and made to approach zero by implementing a mask layout during ion implantation. This involves covering all of the polysilicon electrodes with a photoresist mask, and reducing the effective antenna ratio to zero, and performing ion implantation to form source/drain regions thereafter. In this manner, the dependency of ion implantation to pattern sensitivity is also removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile