The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2002

Filed:

Apr. 25, 2000
Applicant:
Inventors:

Donald O. Anstrom, Endicott, NY (US);

Bruce J. Chamberlin, Kirkwood, NY (US);

James W. Fuller, Jr., Endicott, NY (US);

John M. Lauffer, Waverly, NY (US);

Voya R. Markovich, Endwell, NY (US);

Douglas O. Powell, Endicott, NY (US);

Joseph P. Resavy, Endicott, NY (US);

James R. Stack, Endicott, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/14 ;
U.S. Cl.
CPC ...
H05K 1/14 ;
Abstract

Conductive substructures of a multilayered laminate and associated methods of fabrication. The conductive substructures include a 0S1P substructure, a 0S3P substructure, and a 2S1P substructure, in accordance with the notation nSmP, wherein n and m are non-negative integers, wherein S stands for “signal plane,” and wherein P stands for “power plane.” A signal plane is characterized by its inclusion of a layer comprising conductive circuitry. A power plane is characterized by its inclusion of a continuously conductive layer. Thus, a 0S1P substructure includes 0 signal planes and 1 power plane (n=0, m=1). A 0S3P substructure includes 0 signal planes and 3 power plane (n=0, m=3) with a dielectric layer between each pair of power planes. A 2S1P substructure includes 2 signal planes and 1 power plane (n=2, m=1) with a dielectric layer between the power plane and each signal plane. A multilayered laminate includes a stacked substructure configuration having any combination of 0S1P, 0S3P, and 2S1P substructures with dielectric material insulatively separating the substructures from one another.


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