The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Jul. 18, 2001
Hiroaki Ashizawa, Nirasaki, JP;
Akinobu Kakimoto, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A single-substrate-heat-processing method performs a reformation process for a tantalum oxide film on a wafer and a crystallization process for this film in this order. In the reformation process and crystallization process, a heater is set at preset temperatures substantially equal to each other, and a pressure in a process chamber is set at first and second process pressures different from each other. A density of a gas present between a support surface and the wafer is changed by using the pressure in the process chamber as a parameter, and thus a heat transfer rate between the support surface and wafer is changed, thereby setting a wafer temperature at first and second process temperatures different from each other.