The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
May. 29, 2001
Akira Mao, Tainan, TW;
Min-Hung Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabrication of a damascene structure is described. A substrate having a first conductive layer formed thereon is provided. A silicon nitride type of first dielectric layer is formed on the substrate, followed by patterning the first dielectric layer to form a trench like structure. A silicon oxide type of second dielectric layer is then formed on the first dielectric layer and in the trench like structure and an air-gap is concurrently formed in the second dielectric layer that is in the trench like structure. Thereafter, the second dielectric layer is planarized until a surface of the first dielectric layer is exposed. The first dielectric layer is then removed to form a trench, followed by filling the trench with a second conductive layer.