The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Dec. 16, 1999
Michihiko Yanagisawa, Ayase, JP;
Speedfam-Ipec Co Ltd, Kanagawa, JP;
Abstract
The present invention provides a processing method of outermost periphery edge part of silicon wafer comprising, etching the outermost periphery edge of silicon wafer by activated species gas generated in plasma. The plasma activated species gas can be generated by dissociation of, for example, sulfur hexafluoride gas in a discharge tube . Further, provides a processing apparatus for etching of outermost periphery edge of silicon wafer by means of plasma etching method comprising, a means to hold and rotate a silicon wafer , a container which covers all surface of silicon wafer except a part of outermost periphery edge, a vacuum chamber which contain said container and a plasma generating means
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile