Chain gate mos structure

Abstract

A structure is disclosed for a multi-finger transistor with improved high frequency performance. An array of isolated active regions is formed in a semiconductor substrate. A source region and a drain region are formed in each of the active regions and are disposed on either side of a central channel region. A gate oxide layer is formed over each channel region. Conductive gate fingers that extend over the gate oxide layers and also beyond the active areas are formed so that each gate finger constitutes a continuous conductive line providing and connecting the gates of the plurality of active regions. A dielectric layer is formed over the active regions and over the surrounding isolation regions. A conductive via is formed through the dielectric layer to each source region and to each drain region. For each gate finger or conductive via is opened between the active region and at both ends of the finger contact region is formed over each conductive via. Conductive lines are formed connecting together all the contact regions disposed over source regions, connecting together all the contact regions disposed over drain regions and connecting together all the contact regions disposed over gate fingers.