The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
May. 17, 2001
Mario Saggio, Acicastello, IT;
Ferruccio Frisina, Sant'Agata Li Battiati, IT;
Angelo Magri', Belpasso, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A MOS technology power device is described which comprises a plurality of elementary active units and a part of said power device which is placed between zones where the elementary active units are formed. The part of the power device comprises at least two heavily doped body regions of a first conductivity type which are formed in a semiconductor layer of a second conductivity type, a first lightly doped semiconductor region of the first conductivity type which is placed laterally between the two body regions. The first semiconductor region is placed under a succession of a thick silicon oxide layer, a polysilicon layer and a metal layer. A plurality of second lightly doped semiconductor regions of the first conductivity type are placed under said at least two heavily doped body regions and under said first lightly doped semiconductor region of the first conductivity type, each region of said plurality of second lightly doped semiconductor regions of the first conductivity type being separated from the other by portions of said semiconductor layer of the second conductivity type.