The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Apr. 05, 1999
Applicant:
Inventors:
Yu-Chang Chow, Hsinchu, TW;
W. H. Cheng, Chu-Pei, TW;
Chia-Fu Yeh, Taipei, TW;
C. M. Chi, Taichung Hsien, TW;
Cobby Lee, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B 7/00 ; B08B 9/00 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
B08B 7/00 ; B08B 9/00 ; H01L 2/1302 ;
Abstract
A process for cleaning the interior walls of a reaction chamber after a number of silicon wafers is etched inside the chamber. The cleaning process includes bombarding the interior walls of the chamber with a first type of plasma in a dry cleaning operation, and then bombarding the interior walls of the chamber with a second type of plasma containing the element hydrogen in a warm-up operation. No silicon wafers need to be placed inside the chamber when the dry cleaning operation or the warm-up operation is conducted.