The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Nov. 01, 1999
Hichem M'Saad, Santa Clara, CA (US);
Seon Mee Cho, Santa Clara, CA (US);
Dana Tribula, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH ), ethane (C H ), butane (C H ), propane (C H ), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH ). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.