The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Jan. 11, 2001
Gerald R. Dietze, Portland, OR (US);
Sean G. Hanna, Portland, OR (US);
Zbigniew J. Radzimski, Brush Prairie, WA (US);
SEH America, Inc., Vancouver, WA (US);
Abstract
A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile