The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Aug. 28, 1998
Sen-Fu Chen, Taipei, TW;
Ming-Chieh Yeh, Hsin-chu County, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method for improving particle level, stability of etch rate, and better etch uniformity by using a dry plasma clean to remove polymer buildup from the upper electrode and walls of an etch chamber after spin-on-glass etchback is described. An etching chamber having a lower electrode, upper electrode, and interior walls is provided. Spin-on-glass etchback is performed within the etching chamber whereby a polymer buildup forms on surfaces of chamber. A dummy wafer is placed into the etching chamber and the polymer buildup within the chamber is removed using a dry plasma cleaning process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile