The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
May. 18, 2000
Syun-Ming Jang, Hsin-Chu, TW;
Juing-Yi Cheng, Chishang Town, Kaoshing County, TW;
Chung-Long Chang, Dou-Liu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for forming an aperture fill layer within a aperture, there is first provided a topographic substrate having an aperture formed therein. There is then formed over the topographic substrate and filling the aperture a blanket aperture fill layer. There is then planarized, while employing a first chemical mechanical polish (CMP) planarizing method, the blanket aperture fill layer to form a blanket planarized aperture fill layer while not reaching the topographic substrate. Finally, there is then planarized, while employing a second planarizing method, the blanket planarized aperture fill layer to form within the aperture a patterned planarized aperture fill layer. The two step planarizing method may be employed for forming with enhanced planarity and attenuated topographic substrate erosion a patterned planarized aperture fill layer, such as a patterned planarized trench isolation region, within a topographic substrate, such as a topographic semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile