The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jun. 12, 2000
Hao-Chieh Liu, Taipei, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A method for forming a plug or damascene trench on a semiconductor device includes the following steps: depositing a dielectric layer consisting of hydrogen silsesquioxane (HSQ) on the semiconductor device, depositing a mask layer consisting of a hard mask material on the dielectric layer, removing a portion of the mask layer and defining the remaining portion of the mask layer as a hard mask, curing the portion of the dielectric layer not covered with the hard mask by e-beam; removing the portion of the dielectric layer not being cured by e-beam with a wet etch process to create an opening in the dielectric layer, wherein the wet etch rate of the portion of the dielectric layer being e-beam cured is significantly lower than that of the portion of the dielectric layer not being e-beam cured, and filling the opening in the dielectric layer with a kind of metal material or polysilicon.