The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Sep. 20, 1999
Lawrence Lui, Panchiao, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method to form dual damascene structures is described. A substrate layer is provided. An anti-diffusion layer is deposited. A first dielectric layer is deposited. An etch stopping layer is deposited. A second dielectric layer is deposited. The second dielectric layer, the etch stopping layer, and the first dielectric layer are patterned to form the vias. A liner layer is deposited overlying the second dielectric layer and internal surfaces of the lower trenches. The liner layer and the second dielectric layer are patterned to form the upper trenches. The liner layer and the anti-diffusion layer are etched through to complete the formation of the dual damascene structure, and the integrated circuit device is completed.