The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jul. 27, 2000
David Donggang Wu, Austin, TX (US);
William R. Roche, Beaverton, OR (US);
Scott D. Luning, Austin, TX (US);
Karen L. E. Turnqest, Pflugerville, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The present invention is directed to a method of forming a semiconductor device. In one illustrative embodiment, the method comprises forming a layer of polysilicon, forming a masking layer above the layer of polysilicon, and patterning the masking layer to expose portions of the layer of polysilicon. The method further comprises implanting a dopant material into the exposed portions of the layer of polysilicon to convert the exposed portions of the layer of polysilicon to substantially amorphous silicon, and performing an etching process to remove the substantially amorphous silicon to define a gate electrode.