The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2002

Filed:

Nov. 19, 1998
Applicant:
Inventors:

Hiroshi Takahashi, Chiba, JP;

Yoshiharu Shirakawabe, Chiba, JP;

Nobuhiro Shimizu, Chiba, JP;

Michel Despont, Chiba, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/300 ; G21K 7/00 ;
U.S. Cl.
CPC ...
G01N 2/300 ; G21K 7/00 ;
Abstract

A self-detecting type of SPM probe can eliminate influences of a leak current between piezo-resistors each other, between another piezo-resistors opposite to each other, or between the piezo-resistor and the other one, or of a carrier generated by irradiation of light thereto over the piezo-resistors by forming impurity diffusion layers each consisting of a conductive type (n well regions) reverse to a conductive type of a semiconductor substrate (p-type silicon substrate) on each interface between each of the piezo-resistors and the semiconductor substrate respectively to insulate the elements from one another.


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