The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jul. 22, 2000
Applicant:
Inventor:
Jain-Hon Chen, Chiayi, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/13205 ;
Abstract
A lithography and etching process, which is applicable on a substrate, is described. A material layer to be patterned is formed on the substrate, then a silicon oxynitride layer of more than 800 angstroms in thickness is formed over the material layer. Subsequently, a patterned photoresist layer is formed over the silicon oxynitride layer, followed by removing the exposed silicon oxynitride layer by using the photoresist layer as a mask, and removing the exposed material layer by using the patterned silicon oxynitride layer as a mask to form a patterned material layer.