The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2002

Filed:

Sep. 14, 2000
Applicant:
Inventors:

Hiroya Kirimura, Kyoto, JP;

Naoto Kuratani, Kyoto, JP;

Kiyoshi Ogata, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
Abstract

In a thin film forming method and an apparatus A for implementing the method, a deposition chamber provided with a substrate holder and a radical emitting device continuing to the chamber for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder are used. Deposition gas plasma PL is formed at the vicinity of the substrate S on the holder by supplying a predetermined deposition gas into the chamber . Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device , and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.


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