The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Nov. 16, 2000
Wei Liu, Sunnyvale, CA (US);
Yiqiong Wang, Morgan Hill, CA (US);
Maocheng Li, Fremont, CA (US);
Anisul Khan, Sunnyvale, CA (US);
Shaoher Pan, San Jose, CA (US);
Dragan Podlesnik, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O ).