The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Nov. 29, 2000
John Chu, Hsinchu, TW;
Der-Tsyr Fan, Hsinchu, TW;
Chon-Shin Jou, Hsinchu, TW;
Ting S. Wang, Hsinchu, TW;
Mosel Vitelic Inc., , TW;
Abstract
A method for manufacturing a semiconductor device having an excellent metallization is provided. The method includes the steps of a). providing a semiconductor substrate, b) forming a conductive layer on the semiconductor substrate, c) forming a dielectric layer on the conductive layer, d) forming a titanium nitride layer directly on the dielectric layer without contacting the conductive layer, and e) patternizing the titanium nitride layer, the dielectric layer and the conductive layer, wherein the dielectric layer is used for avoiding spontaneous electrochemical reaction between the titanium nitride layer and the conductive layer,