The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Jun. 15, 2001
Applicant:
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Reda Razouk, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A low-power high-frequency bipolar transistor is formed to have a small self-aligned intrinsic base region, and small self-aligned extrinsic base and emitter regions that contact the intrinsic base region. The small regions reduce the base resistance, the base-to-collector capacitance, and the base-to-emitter capacitance.