The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Jun. 21, 2001
Lawrence N. Brigham, Beaverton, OR (US);
Richard Green, Aloha, OR (US);
Ebrahim Andideh, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Microelectronic structures embodying the present invention include a silicon pillar contiguous with a bulk semiconductor, the pillar being surrounded by a shallow trench isolation insulator, which has been recessed to receive polysilicon and a superjacent layer of silicon deposited thereon. Source and drain (S/D) terminals are formed in the silicon of the recessed portions of the shallow trench isolation insulator. In this way the S/D terminals are substantially isolated from the body, thereby substantially reducing both parasitic junction capacitance and junction leakage currents. Isolation of S/D terminals in this way also reduces the degradation of effective channel length that can otherwise occur in MOSFETs.