The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
May. 30, 2000
Makoto Kawai, Annaka, JP;
Keiichi Goto, Annaka, JP;
Kazuyoshi Tamura, Annaka, JP;
Yoshihiro Kubota, Annaka, JP;
Toshimi Kobayashi, Annaka, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
There is disclosed a silicon electrode plate including silicon single crystal used as an upper electrode in a plasma etching apparatus wherein concentration of interstitial oxygen contained in the silicon electrode plate is not less than 5×10 atoms/cm and not more than 1.5×10 atoms/cm , and the silicon electrode plate wherein nitrogen concentration in the silicon electrode plate is not less than 5×10 atoms/cm and not more than 5×10 atoms/cm . There can be provided a silicon electrode plate consisting of silicon single crystal used as an upper electrode in a plasma etching apparatus wherein problems due to adhesion of impurities such as heavy metal or the like can be prevented.