The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jan. 19, 2000
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1144 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1144 ;
Abstract
Semiconductor devices and conductive structures can be formed having a metallic layer. In one embodiment, a semiconductor device includes an amorphous metallic layer ( ) and a crystalline metallic layer ( ). The amorphous metallic layer ( ) helps to reduce the likelihood of penetration of contaminants through the amorphous metallic layer ( ). A more conductive crystalline metallic layer ( ) can be formed on the amorphous metallic layer ( ) to help keep resistivity relatively low. When forming a conductive structure, a metal-containing gas and a scavenger gas flow simultaneously during at least one point in time. The conductive structure may be part of a gate electrode.