The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Jul. 07, 2000
Chine-Gie Lou, Hsinchu Hsien, TW;
Su-Yuan Chang, Hsinchu Hsien, TW;
Taiwan Semiconductor Manufacturing Co., LTD, Hsinchu, TW;
Abstract
A method of forming a dual damascene structure. A first organic low dielectric constant dielectric layer, a heat diffusion layer and a second organic low dielectric constant dielectric layer are formed sequentially over a substrate. A first mask layer having a via opening pattern and a second mask layer having a trench pattern are formed sequentially over the second organic. The second organic low dielectric constant dielectric layer exposed by the via opening pattern is etched using the first mask layer as a hard mask layer. The heat diffusion layer exposed by the first mask layer and the via opening in the trench region are removed using the second mask layer and the second organic low dielectric constant dielectric layer as masks. Hence, the trench pattern and the via opening pattern are transferred to the first mask layer and the heat diffusion layer, respectively. The second and the first organic low dielectric constant dielectric layer are etched using the second mask layer and the heat diffusion layer as a hard mask. Ultimately, the trench and via opening of a dual damascene structure are formed.