The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Jul. 26, 2000
Applicant:
Inventors:
Minh Van Ngo, Fremont, CA (US);
Hartmut Ruelke, Dresden, DE;
Joerg Hohage, Dresden, DE;
Lothar Mergili, Radebeul, DE;
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
Reliably capped Cu interconnects are formed with a significant reduction in the amount and size of hillocks by reducing the time during which the Cu interconnect is exposed to elevated temperatures for plasma surface treatment and capping layer deposition. Embodiments of the present invention include maintaining a continuous plasma during surface treatment to remove copper oxide and capping layer deposition, and exposing the wafer to elevated temperatures to no greater than 60 seconds in the reaction chamber.