The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
May. 26, 1999
Applicant:
Inventor:
Gang Bai, San Jose, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ;
Abstract
A method of fabricating an unlanded via over a polymer that is used as an intraline or intralayer dielectric is described. In one embodiment, the present invention creates an etch-stop layer for forming unlanded vias using three steps. A recess is created in an intraline dielectric, such as an organic polymer. An etch-stop layer is then deposited over the intraline dielectric. The etch-stop layer is then polished back before depositing a final insulating layer. The unlanded via is formed by etching through the final insulating layer. The intraline dielectric is protected by the etch-stop layer during the etch of the final insulating layer to form the unlanded via.