The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Jun. 02, 2000
Yungsang Kim, San Jose, CA (US);
Takehiko Komatsu, Ichikawa Chiba, JP;
Claes H. Bjorkman, Mountain View, CA (US);
Hongqing Shan, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A single-step plasma etch process for etching both oxide and nitride selectively to photoresist and silicon. The etching gas includes a fluorocarbon, difluoromethane, oxygen, and carbon monoxide. The fluorocarbon is preferably hydrogen free. Preferred fluorocarbons are hexafluorobutadiene (C F ), octafluorocyclobutane (C F ), and carbon tetrafluoride (CF ), of which C F is the most preferred. Approximately equal amounts are supplied of the fluorocarbon, difluoromethane, and oxygen and a significantly larger amount of carbon monoxide. The chemistry is also applicable to etching organo silicate glass selectively to photoresist.