The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
Jan. 18, 2000
Marokkey Raphael Sajan, Singapore, SG;
Zhu Sui Hua, Singapore, SG;
Tsun-Lung Alex Cheng, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A new method is provided for the creation of a dual damascene structure. The method of the invention uses a gray tone mask to form dual damascene trenches in one single masking and etch step. The gray tone mask technology allows for a photoresist patterning process after which the photoresist profile can be transferred into the underlying substrate by an etch process. By making the photoresist profile equal to the profile of a dual damascene structure, the dual damascene profile can be created in the surface of a substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile