The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Jan. 13, 2000
Bernd Goebel, Munich, DE;
Wolfgang Roesner, Munich, DE;
Franz Hofmann, Munich, DE;
Emmerich Bertagnolli, Munich, DE;
Eve Marie Martin, Munich, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A storage cell has a number of projections of a semiconductor substrate arranged in rows and columns, neighboring rows of the projections being translation-symmetrical in relation to a y-axis which extends parallel to the columns. Each of the projections has at least one first source/drain region of a selection transistor and one channel region arranged below the first source/drain region, which is surrounded by a gate electrode annularly. A storage capacitor is connected between the first source/drain region and a bit line. The bit line as well as the storage capacitor are arranged essentially above the semiconductor substrate. Second source/drain regions of selection transistors are buried in the semiconductor substrate and connected with each other. Word lines can be formed self-justified in the form of adjacent gate electrodes. The projections can be created by etching with only one mask. The storage cell can be produced with an area of 4F , F being the minimal structural size that can be produced in the respective technology.