The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Jan. 05, 2000
Applicant:
Inventors:
Terri A. Couteau, Rosanky, TX (US);
William Jarrett Campbell, Austin, TX (US);
Anthony J. Toprac, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
The present invention is directed to a method of controlling the width of a gate electrode based upon the etch rate of a chemical bath. In one illustrative embodiment, the method comprises determining an etching rate for a chemical bath, determining the manufactured width of the gate electrode, and varying the time duration of an etching process performed in the bath depending upon the etch rate of the bath and the width of the gate electrode.