The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2002

Filed:

Dec. 17, 1999
Applicant:
Inventors:

Ebrahim Andideh, Portland, OR (US);

Sam Sivakumar, Hillsboro, OR (US);

Larry Wong, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

An improved method of forming a semiconductor device that has a carbon doped oxide insulating layer. The method comprises forming a first insulating layer that includes a carbon doped oxide, then forming on the surface of the first insulating layer a second insulating layer that comprises silicon dioxide.


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