The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Jan. 18, 2000
Tung-Po Chen, Taichung, TW;
Yung-Chang Lin, Feng-Yuan, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for manufacturing a semiconductor device is disclosed. The method can reduce thermal budget in node contact application. It includes mainly the following processes. A substrate is first provided, then a dielectric layer is formed over the substrate. Next, a node contact opening through the dielectric layer to top surface of the substrate is formed by coating the dielectric layer with a photoresist layer, patterning the photoresist layer with pattern of a node contact by exposure and development, then etching the dielectric layer until top surface of said substrate exposed using said patterned photoresist layer as a mask. Subsequently, the photoresist layer is removed. Finally, a silicon nitride layer is formed on inside wall of the node contact opening by rapid thermal chemical vapor deposition (RTCVD).