The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Sep. 29, 2000
Kung Linliu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of manufacturing dynamic random access memory (DRAM) capacitor. A semiconductor substrate having an insulation layer thereon is supplied. A triblock copolymer layer is formed over the insulation layer by performing a spin-coating process. The triblock copolymer layer is patterned and then the triblock copolymer layer is annealed at a low temperature. The annealed triblock copolymer is exposed to ultraviolet rays in an atmosphere containing ozone so that the triblock copolymer is converted into a lower electrode layer having a bicontinuous three-dimensional nanoporous structure. A dielectric layer is formed over the lower electrode. An upper electrode is formed over the dielectric layer. The upper electrode, the dielectric layer and the lower electrode are sequentially patterned to form the DRAM capacitor. The lower electrode made from bicontinuous ceramic material is able to allow for greater surface area and hence is suitable for forming the capacitors in a DRAM unit with storage capacity of 64 MB or more.