The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2002

Filed:

May. 18, 2000
Applicant:
Inventors:

Jack A. Mandelman, Stormville, NY (US);

Rama Divakaruni, Somers, NY (US);

Herbert Ho, Cornwall, NY (US);

Giuseppe La Rosa, Fishkill, NY (US);

Yujun Li, Poughkeepsie, NY (US);

Jochen Beintner, Wappingers Falls, NY (US);

Radhika Srinivasan, Mahwah, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract

A semiconductor device and method of manufacturing thereof are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. A nitride liner is formed in the trench. Charge is trapped in the nitride liner. In a preferred embodiment, the trench is filled with an oxide by an HDP process to increase the amount of charge trapped in the nitride liner. Preferably, the oxide fill is formed directly on the nitride liner.


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