The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2002

Filed:

Aug. 09, 1999
Applicant:
Inventors:

Roger D. Durst, Middleton, WI (US);

Sean N. Carney, Madison, WI (US);

Yacouba Diawara, Madison, WI (US);

Rudolph Shuvalov, Madison, WI (US);

Assignee:

Bruker AXS, Inc., Madison, WI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/28 ;
U.S. Cl.
CPC ...
G01J 5/28 ;
Abstract

A detection apparatus for detecting an electron cloud includes a resistive anode layer with a detection plane upon which the electron cloud is incident. The resistive layer is capacitively coupled to a readout structure having a conductive grid parallel to the detection plane. Charge on the resistive layer induces a charge on the readout structure, and currents in the grid. The location of the induced charge on the readout structure corresponds to the location on the detection plane at which the electron cloud is incident. Typically, the detection apparatus is part of a detector, such as a gas avalanche detector, in which the electron cloud is formed by conversion of a high-energy photon or particle to electrons that undergo avalanche multiplication. The spacing between the anode layer and the readout structure is selected so that the width of the charge distribution matches the pitch between conductive segments of the grid. The resistivity of the anode layer is selected to be low enough to support the highest bandwidth of the readout electronics, but high enough to allow penetration of the charge through the anode layer to the readout structure.


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