The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Mar. 31, 2000
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin Chu, TW;
Abstract
A method for forming a passivation layer on at least one copper conductive element in a semiconductor structure and the devices formed are described. In the method, after a top surface of a semiconductor device that contains copper conductors embedded in an insulating layer is first planarized by a chemical mechanical polishing method, an etching process is conducted to create a stepped or corrugated surface between the surface of the copper conductor and the surface of the insulating layer, so that when a passivation layer is later deposited on top of the semiconductor structure, the same stepped or corrugated surface is reproduced in the passivation layer and thus providing a mechanical interlock between the passivation layer and the copper conductor for preventing adhesion failure or peeling of the passivation layer from the surface of the semiconductor structure.